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提出一种以SiGe HBT为有源器件的超宽带有源可调衰减器。在超宽频带内实现了宽增益调节范围和高线性度。详细分析了有源衰减器的最小插入损耗及最大衰减量,基于Jazz 0.35μm SiGe HBT工艺,通过选择合适的SiGe HBT有源器件,完成了超宽带有源可调衰减器的设计。利用安捷伦公司的ADS仿真软件,对设计的有源可调衰减器进行仿真验证。结果表明,在3.1～10.6GHz的超宽带内,当电压在0.4～1.8V的范围内变化时,该有源可调衰减器的增益动态范围大于50dB,S11在整个电压变化范围内均低于-10dB,且输入3阶交调点(IIP3)为13dBm。
An ultra-wideband active attenuator with SiGe HBT as active device is proposed. Wide gain adjustment range and high linearity are realized in ultra-wideband. The minimum insertion loss and the maximum attenuation of the active attenuator are analyzed in detail. Based on the Jazz 0.35μm SiGe HBT process, the design of an ultra-wideband active attenuator is completed by selecting the appropriate SiGe HBT active device. Using ADS simulation software from Agilent, the designed active adjustable attenuator is verified by simulation. The results show that the dynamic range of gain of the active adjustable attenuator is greater than 50dB when the voltage is in the range of 0.4 ~ 1.8V in the ultra-wideband of 3.1 ~ 10.6GHz, and the S11 is lower than that of the whole voltage range -10dB, and input 3rd order intermodulation point (IIP3) is 13dBm.