在77K和0—50kbar静压范围内研究了阱宽分别为m=4.8,12个单原子层的(CdTe)_m/(ZnTe)_n应变量子阱的静压光致发光。在常压下,m=8和12的量子阱的发光峰比m=4的量子阱的发光峰显著变宽。表明在这两个阱中应变已发生弛豫。用Kronig-Penney模型计算的峰值能量证实了这一点。在所测静压范围内峰宽无明显增加。它们的压力系数从m=12的6.81meV/kbar增加到m=4的8.24meV/kbar。计算表明,势垒高度随压力增加而增加是使压力系数随阱宽减小而增加的主要原因。 The static pressure photoluminescence of (CdTe) _m / (ZnTe) _n strained quantum wells with well widths of m = 4.8 and 12 single-atom layers was studied in the static pressure range of 77K and 0-50kbar. At atmospheric pressure, the luminescence peaks of quantum wells with m = 8 and 12 quantum wells have a luminescence peak ratio m = 4 significantly widened. Indicating that the strain has relaxed in both wells. This is confirmed by the peak energy calculated using the Kronig-Penney model. In the measured static pressure range no significant increase in peak width. Their pressure coefficient increases from 6.81 meV / kbar at m = 12 to 8.24 meV / kbar at m = 4. Calculations show that the increase of the barrier height with the increase of the pressure is the main reason that the pressure coefficient increases with the decrease of the well width.