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用椭圆偏振术研究了不同剂量P~+注入硅样品损伤层的复折射率n|~=n-ik. 提出一个简单的模型对折射率n在临界剂量处出现峰值作了唯象的解释.
The elliptic polarization technique was used to study the birefringence index n ~ ~ = n-ik of the implanted layers of silicon implanted with different doses of P ~ +. A simple model was presented to explain the phenomenal appearance of the refractive index n at the critical dose.