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在空间中,辐射粒子入射半导体器件,会在器件中淀积电荷。这些电荷被器件的敏感区域收集,造成存储器件(如静态随机存储器(SRAM))逻辑状态发生变化,产生单粒子翻转(SEU)效应。蒙特卡洛工具——Geant4能够针对上述物理过程进行计算机数值模拟,可以用于抗辐射器件的性能评估与优化。几何描述标示语言(GDML)能够在Geant4环境下对器件模型进行描述。通过使用GDML建立三维的器件结构模型,并使用Geant4进行不同能量质子入射三维器件模型的仿真。实验结果表明,在三维器件仿真中低能质子要比高能质子更容易引起器件的单粒子翻转效应。
In space, the radiation particles enter the semiconductor device, depositing charges in the device. These charges are collected in sensitive areas of the device, causing changes in the logic state of the memory device, such as static random access memory (SRAM), resulting in a single-particle-flip (SEU) effect. Monte Carlo Tools - Geant4 enables computer numerical simulations of these physical processes and can be used for performance evaluation and optimization of radiation resistant devices. Geometry Description Markup Language (GDML) describes the device model in Geant4. Through the use of GDML to build a three-dimensional device structure model, and use Geant4 for different energy proton incident three-dimensional device model simulation. The experimental results show that the low-energy protons in the three-dimensional device simulation are easier to cause single-event flip-flop than the high-energy protons.