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研究了氧化石墨烯(GO)掺杂聚(3,4-亚乙二氧基噻吩):聚(苯乙烯磺酸)(PEDOT:PSS)作为空穴注入层对有机发光二极管发光性能的影响.在PEDOT:PSS水溶液中掺入GO,经过湿法旋涂和退火成膜后,不仅提高了空穴注入层的空穴注入能力和导电率,透光率也得到了相应的提高,从而使得有机发光二极管(OLED)器件的发光性能得到了提升.通过优化GO掺杂量发现,当GO掺杂量为0.8%(质量分数)时,空穴注入层的透光率达到最大值(96.8%),此时获得的OLED器件性能最佳,其最大发光亮度和最大发光效率分别达到17939 cd·m~(-2)和3.74 cd·A~(-1).与PEDOT:PSS作为空穴注入层的器件相比,掺杂GO后器件的最大发光亮度和最大发光效率分别提高了46.6%和67.6%.
The effects of graphene oxide (GO) doped poly (3,4-ethylenedioxythiophene): poly (styrenesulfonic acid) (PEDOT: PSS) as a hole injection layer on the luminescent properties of organic light-emitting diodes were investigated. The incorporation of GO into PEDOT: PSS aqueous solution not only improves the hole injection ability and conductivity of the hole injection layer, but also improves the transmittance of light through the wet spin coating and the annealing, so that the organic The light-emitting performance of the light-emitting diode (OLED) device has been improved. By optimizing the GO doping amount, it is found that the light transmittance of the hole injection layer reaches the maximum (96.8%) when the doping amount of GO is 0.8% , The best performance of the OLED device obtained at this time, the maximum brightness and maximum luminous efficiency reached 17939 cd · m ~ (-2) and 3.74 cd · A ~ 1. With PEDOT: PSS as a hole injection layer Compared with the devices, the maximum luminescence intensity and the maximum luminescence efficiency of the devices after doping GO increased 46.6% and 67.6% respectively.