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用等离子体射频辉光放电法，在低衬底温度（＜１７０℃）、小ｒｆ功率（＜６０ｍＷｃｍ２）条件下，实现了硼掺杂硅碳合金薄膜材料的微晶化。获得了暗电导率σＤ～０．２ｓｃｍ－１、光带隙宽度Ｅｏｐｔ～２．２ｅＶ的ｐ型微晶氢化硅碳合金（μＣ－Ｓｉ：Ｂ：Ｈ）薄膜。晶化的关键是Ｈ２稀释率和掺杂水平的控制。对该材料的掺杂效应、光电特性以及掺杂水平对材料结构的影响进行了详细研究。
By using the plasma radio frequency glow discharge method, the microcrystallization of the boron-doped silicon-carbon alloy thin film material is realized under the condition of low substrate temperature (<170 ℃) and small rf power (<60mWcm2). A p-type microcrystalline silicon-hydrogen-silicon-carbon alloy (μC-Si: B: H) thin film with dark conductivity σD ~ 0.2scm-1 and optical band gap Eopt ~ 2.2eV was obtained. The key to crystallization is the control of H2 dilution rate and doping level. The effects of doping effect, photoelectric properties and doping level of the material on the structure of the material were studied in detail.