In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors(HEMTs) each with a gate-width of 2 × 50 μm are designed and fabricated. Their excellent DC and RF characterizations are demonstrated. Their full channel currents and extrinsic maximum transconductance(gm,max) values are measured to be 681 mA/mm and 952 mS/mm, respectively. The off-state gate-to-drain breakdown voltage(BVGD) defined at a gate current of -1 mA/mm is 2.85 V. Additionally, a current-gain cut-off frequency( fT) of 164 GHz and a maximum oscillation frequency( fmax) of 390 GHz are successfully obtained; moreover, the fmaxof our device is one of the highest values in the reported 0.15-μm gate-length lattice-matched InP-based HEMTs operating in a millimeter wave frequency range. The high gm,max, BVGD, fmax, and channel current collectively make this device a good candidate for high frequency power applications. In this paper, 0.15-μm gate-length In0.52Al0.48As / In0.53Ga0.47As InP-based high electron mobility transistors (HEMTs) each with a gate-width of 2 × 50 μm are designed and fabricated. Their excellent DC Their full channel currents and extrinsic maximum transconductance (gm, max) values ​​are measured to be 681 mA / mm and 952 mS / mm, respectively. The off-state gate- to- drain breakdown voltage (BVGD) defined at a gate current of -1 mA / mm is 2.85 V. Additionally, a current-gain cut-off frequency (fT) of 164 GHz and a maximum oscillation frequency (fmax) of 390 GHz are successfully obtained; moreover, the fmaxof our device is one of the highest values ​​in the reported 0.15-μm gate-length lattice-matched InP-based HEMTs operating in a millimeter wave frequency range. The high gm, max, BVGD, fmax, and channel current collectively make this device a good candidate for high frequency power applications.