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本文描述用离子束透过钽金属膜进行混合和快速热处理方法来形成钽的硅化物.用溅射方法在P型硅衬底上淀积一层金属钽,然后用砷离子束透过钽金属模进行混合,采用快速热处理后形成了平整的硅化钽薄层.使用厚度为500埃的钽金属膜,得到钽的硅化物薄层电阻为5.5Ω/□.研究了砷离子能量、剂量及钽膜厚度对钽的硅化物薄层电阻的影响.用透射电镜和台阶仪对所形成的硅化钽进行了分析和厚度测量.
Described herein is the formation of a tantalum silicide by a mixture of ion beams through a tantalum metal film and a rapid thermal process by depositing a layer of tantalum metal on a P-type silicon substrate by sputtering followed by arsenic ion beam through the tantalum metal Molds were formed and a thin layer of tantalum silicide was formed by rapid heat treatment.The thin film of tantalum with a thickness of 500 Å was found to have a sheet resistance of 5.5Ω / □. Arsenic ion energy, dose and tantalum Effect of Film Thickness on Tantalum Silicide Sheet Resistance The tantalum silicide formed was analyzed and measured for thickness using a transmission electron microscope and a stepper.