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采用软件理论分析的方法对不同掺杂类型的GaN间隔层和量子阱垒层在InGaN/GaN多量子阱双波长发光二极管中对发光光强、内量子效率、电子空穴浓度分布、溢出电流等作用进行模拟分析.分析结果表明,p型掺杂的GaN间隔层与量子阱垒层的引入同不掺杂和n型掺杂两种类型比较,可以大大减少溢出电子流,极大地提高各量子阱内空穴浓度,提高双波长发光二极管的发光强度,极大的改善内量子效率随电流增大而下降问题.
The theoretical analysis of the software for different doping types of GaN spacer and quantum well barrier in InGaN / GaN multiple quantum well dual-wavelength light-emitting diodes on the luminous intensity, internal quantum efficiency, electron-hole concentration distribution, overflow current The simulation results show that the introduction of p-type doped GaN spacer layer and quantum well barrier are the same as those of undoped and n-type doped, which can greatly reduce the overflow electron flow and greatly improve the quantum efficiency of each quantum Hole hole concentration, improve the dual-wavelength light-emitting diode light intensity, greatly improve the internal quantum efficiency decreases with the current increases.