论文部分内容阅读
一、概述大规模集成电路存贮器的发展,给存贮器系统带来了巨大的影响,现在不论是计算机的主存,还是超高速缓存以及输入输出设备的缓存都逐渐地使用半导体存贮器,尤其是 MOS 半导体存贮器在主存领域里正在取代磁心存贮器而居于主流。因此不论是对电路的设计、制造者来说,还是对系统设计者来说,需要了解大规模集成电路(LSI)存贮器的可靠性是完全必要的。LSI 存聍器具有体积小、集成度高、速度快、可靠性高等特点,尤其是存取速度高是半导体存贮器区别于磁心存聍器的一个显著特点。
I. Overview The development of large-scale integrated circuit memory has brought tremendous impact on the memory system. Now whether it is the main memory of a computer, or the caching of caches and I / O devices, the use of semiconductor memory Devices, and MOS semiconductor memories in particular, are replacing the core memory in the main memory field and prevailing. Therefore, it is absolutely necessary for the circuit designer, the manufacturer, or the system designer to understand the reliability of the LSI memory. LSI memory device with small size, high integration, high speed, high reliability, especially high speed access to semiconductor memory is different from the core memory device is a notable feature.