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采用直流反应磁控溅射的方法 ,在Al Si(1 0 0 )衬底上沉积了ZnO晶体薄膜。利用Al和Pt作为与ZnO接触的欧姆电极与肖特基电极 ,制作了ZnO薄膜肖特基二极管。X射线衍射测试结果表明ZnO薄膜具有高度的c轴择优取向。原子力显微分析表明 :样品表面光洁平整 ,晶粒尺寸约 1 0 0nm ,扩展电阻分析表明ZnO薄膜的厚度为 0 4 μm ,载流子浓度为 1 8× 1 0 1 5cm- 3,此后的霍尔测试证实了这一结果并说明ZnO的导电类型为n型。室温下的I V测试显示ZnO肖特基二极管具有明显的整流特性。Pt与n型ZnO接触的势垒高度为 0 5 4eV。文中的ZnO肖特基二极管为首次研制的原型器件 ,其性能可以通过器件结构与制作工艺的进一步优化而得到改善。
ZnO thin films were deposited on Al-Si (100) substrates by DC reactive magnetron sputtering. ZnO thin-film Schottky diodes were fabricated using Al and Pt as ohmic electrodes and Schottky electrodes in contact with ZnO. X-ray diffraction test results show that the ZnO film has a high c-axis preferred orientation. Atomic force microscopy analysis showed that the sample surface was smooth and flat with a grain size of about 100 nm. The extended resistance analysis showed that the ZnO thin film has a thickness of 0 4 μm and a carrier concentration of 18 × 10 15 cm -3. The results of the test confirm this result and show that ZnO is n-type. I V tests at room temperature show ZnO Schottky diodes with significant rectification characteristics. The barrier height of Pt in contact with n-type ZnO is 0 5 4eV. The ZnO Schottky diode in this paper is the prototype device developed for the first time and its performance can be improved through the further optimization of device structure and fabrication process.