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采用原子层沉积技术（atomic layer deposition ）在 InP衬底上生长ZnO薄膜，并在不同温度下（500和700℃）进行热退火处理，将P掺杂进入ZnO ，得到p型ZnO薄膜。样品的光学特性通过光致发光光谱（photoluminescence ，PL）来测定，得出热退火温度是影响P扩散掺杂的重要因素，低温 PL光谱中，700℃热退火1 h样品的光谱展现出四个与受主相关的发射峰：3.351，3.311，3.246和3.177 eV ，分别来自受主束缚激子的辐射复合（A°X）、自由电子到受主的发射（FA）、施主受主对的发射（DAP）以及施主受主对的第一纵向声子伴线（DAP‐1LO），计算得到受主束缚能为122 meV ，与理论计算结果一致。通过热扩散方式实现了ZnO薄膜的p型掺杂，解决了制约ZnO基光电器件发展的主要问题，对ZnO基半导体材料及其光电器件的发展有重要意义。“,”The main purpose of this paper is to investigate the optical properties of p‐type ZnO film based on P doping .ZnO film was grown by Atomic layer deposition (ALD) on InP subsrate in this experiment ,and phosphorus diffused into ZnO lattice by annealing treatment at different temperature (500 ,700 ℃) .The optical properties of samples were investigated by photolumi‐nescence (PL) spectroscopy ,which indicated that the annealing temperature is the important factor influencing the phosphorus diffusion doping .The low‐temperature PL spectra of the sample which annealed at 700 ℃ for 1 h exhibited acceptor related emis‐sion peaks located at 3.351 ,3.311 ,3.246 and 3.177 eV ,which were attributed to A°X ,FA ,DAP and DAP‐1LO ,respective‐ly .The acceptor binding energy is estimated to be about 122 meV ,which is agreed with the theoretic values in phosphorus‐doped ZnO films .In this paper ,through thermal diffusion method to realize the p‐type doped ZnO thin films ,it solved the main prob‐lems which limited the development of ZnO based optoelectronic devices ,and has an important significance for the development of the ZnO semiconductor materials and ZnO based photoelectric device .