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在Si(10 0 )衬底上低温生长了一层完全应变的Ge层 ,高温退火形成量子点 .我们用喇曼光谱研究了量子点形成时Si/Ge界面的互扩散现象 ,实验表明量子点的形成伴随着Si/Ge原子之间的互扩散 ,通常在Si衬底上形成的是SiGe合金量子点 ,而不是纯Ge量子点 .
A completely strained Ge layer was grown at low temperature on a Si (100) substrate and annealed at high temperature to form quantum dots. We used Raman spectroscopy to study the interdiffusion of the Si / Ge interface during QD formation. The experimental results show that quantum dots With the inter-diffusion of Si / Ge atoms, SiGe alloy quantum dots are usually formed on Si substrates instead of pure Ge quantum dots.