论文部分内容阅读
在自行设计研制的电子回旋共振等离子体增强金属有机物化学气相沉积(ECR-EMOCVD)装置上生长氮化镓(GaN)薄膜,以氮等离子体为氮源,三乙基镓(TEG)为镓源,蓝宝石(α-Al2O3)为衬底。通过反射高能电子衍射、原子力显微镜、射线衍射实验数据分析,研究了ECR等离子体所产生的活性氢源和氮源对蓝宝石(α-Al2O3)衬底的氮化作用,结果表明:在ECR等离子体中,不掺入氢气,温度较低时可以明显提高α-Al2O3衬底的氮化效果,获得平整的氮化层,且生长的氮化镓缓冲层质量是最好的。
A gallium nitride (GaN) thin film was grown on an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-EMOCVD) device designed and developed by itself. Nitrogen plasma was used as nitrogen source and triethylgallium (TEG) , Sapphire (α-Al2O3) as the substrate. The effects of active hydrogen source and nitrogen source produced by ECR plasma on the sapphire (α-Al2O3) substrate were investigated by means of reflection high-energy electron diffraction, atomic force microscopy and X-ray diffraction. The results show that in ECR plasma , Hydrogen gas is not doped. When the temperature is low, the nitriding effect of the α-Al2O3 substrate can be obviously improved to obtain a flat nitrided layer, and the quality of the gallium nitride buffer layer grown is the best.