论文部分内容阅读
用干涉显微镜观察到硅上磷硅玻璃分成二层厚度均为约1000A的薄层。降低入射电子能量到5keV以下,用原试样分析法测定了磷硅玻璃的成分。在15、20keV入射电子能量下用有衬底薄膜分析法分别测定了一层和二层磷硅玻璃的成分。所得结果和常规电子探针有标样ZAF法的结果相符。二层含磷约10ωt％的磷硅玻璃看来是液相磷硅玻璃冷却时不充分的分解的结果。
An interference microscope was used to observe that the phosphosilicate glass was divided into two thin layers of about 1000 A in thickness. Reduce the incident electron energy to below 5keV, with the original sample analysis of the composition of phosphosilicate glass. The composition of the first and second layers of phosphosilicate glass was measured by a substrate film analysis method at an incident electron energy of 15 and 20 keV. The results obtained are consistent with those of the standard electron probe with standard ZAF method. Phosphorus silicate glass, which contains about 10% by weight of phosphorus in the second layer, appears to be the result of insufficient decomposition during cooling of the liquid phase phosphosilicate glass.