本文描述一种用LPCVD方法淀积Si_3N_4形成太阳电池减反射膜(AR)同时又制得高效率硅太阳电池铝合金高低结背面场(BSF)的新工艺。该工艺不仅简化了太阳电池的制作过程,即电池的AR和BSY一次形成,而且由于系统处于高真空,电池处在N_2和H_2的气氛中,所以改善了太阳电池发射区的表面特性。实验结果表明:为获得较好的电池性能,在完成电池的AR和BSF时,厚的铝膜,较高的淀积Si_3N_4温度以及在电池发射区表面生长80—100的SiO_2层是必要的。 In this paper, a novel process for the deposition of Si_3N_4 by LPCVD on solar cell antireflection coatings (ARs) and high efficiency silicon solar cells (BSFs) is also described. The process not only simplifies the fabrication of the solar cell, ie, the formation of the AR and BSY cells once, but also improves the surface properties of the solar cell’s emitter because the system is under high vacuum and the cell is in an atmosphere of N 2 and H 2. The experimental results show that it is necessary to thicken the aluminum film, deposit the Si 3 N 4 temperature and grow 80-100 SiO 2 on the surface of the cell in order to obtain better cell performance.