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就如何在 4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究 ,并对磁性隧道结的磁电性质及其工作特性进行了初步测量和讨论 .利用现有的光刻设备和工艺条件在 4英寸热氧化硅衬底上直接制备出的磁性隧道结 ,其结电阻与面积的积矢的绝对误差在 10 %以内 ,隧穿磁电阻的绝对误差在 7%以内 ,样品的磁性隧道结性质具有较好的均匀性和一致性 ,可以满足研制磁随机存储器存储单元演示器件的基本要求
A preliminary study on how to deposit high quality magnetic tunnel junction nano-multilayer thin film material on a 4-inch thermal oxide silicon substrate and how to use the photolithographic method to micromachine the magnetic tunnel junction with good uniformity has been made. The magnetic properties of the junction and its operating characteristics of the preliminary measurement and discussion of the use of existing lithography equipment and process conditions in the 4-inch thermal oxide silicon substrate directly prepared magnetic junction, the junction resistance and area product The absolute error of vector is less than 10%, and the absolute error of tunneling magnetoresistance is within 7%. The magnetic tunnel junction properties of samples have good uniformity and consistency, which can meet the basic requirements for developing demonstration devices of magnetic random access memory cells