日立制作所研制的钼栅功率MOS场效应晶体管,不久将有样品出来。这种器件功耗在100瓦漏源耐压为160伏和200伏两种,用TO-3型管壳封装。与该公司的MOSFET功率管的老产品相比,这种器件的棚电阻要低一个数量级,因此其频率特性得以提高。与多晶钼栅相比,钼栅BT试验引起的栅阈值电压的初期值的变化比较大。 Hitachi has developed a molybdenum gate power MOS field-effect transistor, will soon have a sample out. The device consumes 100W of drain-source withstand voltage of 160V and 200V, packaged in a TO-3 type of package. Compared with the company’s old MOSFET power tube products, the shelf resistance of this device is an order of magnitude lower, so its frequency characteristics are improved. In comparison with the polycrystalline molybdenum grid, the initial value of the gate threshold voltage caused by the molybdenum grid BT test is relatively large.