Designs of p-doped in quantum well (QW) barriers and specific number of vertically stacked QWs areproposed to improve the optical performance of GaN-based dual-wavelength light-emitting diodes (LEDs).Emission spectra, carrier concentration, electron current density, and internal quantum efficiency (IQE)are studied numerically. Simulation results show that the efficiency droop and the spectrum intensityat the large current injection are improved markedly by using the proposed design. Compared with the conventional LEDs, the uniform spectrum intensity of dual-wavelength luminescence is realized when aspecific number of vertically stacked QWs is adopted. Suppression of electron leakage current and the promotion of hole injection efficiency could be one of the main reasons for these improvements. Designs of p-doped in quantum well (QW) barriers and specific number of vertically stacked QWs areproposed to improve the optical performance of GaN-based dual-wavelength light- emitting diodes (LEDs). Emission spectra, carrier concentration, electron current density, Compared with the conventional LEDs, the uniform spectrum intensity of dual-wavelength luminescence is realized when aspecific number of vertically stacked QWs is adopted. Suppression of electron leakage current and the promotion of hole injection efficiency could be one of the main reasons for these improvements.