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通过分析硅压敏电阻与晶向的关系,找到力敏电阻在硅膜片上的最佳位置。经测量,在10～400kPa范围内,压阻电桥的灵敏度约为0.36mV/kPa。提出一种由惠斯登电桥双端输出和双级放大器组成的电路结构,以对称的输入结构和全摆幅输出,解决了传感器输出小、易产生零点漂移的问题。用Cadence软件对电路进行模拟,在5V电源电压下,该放大电路的输出范围为0.036～4.953V,开环增益为110dB,CMRR为105.8dB,相位裕度为63.68°,可满足压力传感器的要求。
By analyzing the relationship between the silicon varistor and the crystal orientation, find the best position of the force-sensitive resistor on the silicon diaphragm. Measured in the range of 10 ~ 400kPa, piezoresistive bridge sensitivity of about 0.36mV / kPa. A circuit structure consisting of a double-ended Wheatstone bridge output and a two-stage amplifier is proposed. With a symmetrical input structure and a full-swing output, the problem of small sensor output and zero drift is easily solved. Using Cadence software to simulate the circuit, the 5V output voltage range of the amplifier circuit is 0.036 ~ 4.953V, the open-loop gain is 110dB, the CMRR is 105.8dB, the phase margin is 63.68 °, which can meet the requirements of the pressure sensor .