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采用改进的溶胶 -凝胶技术 ,在Pt/Ti/TiO2 /SiO2 /Si( 1 0 0 )基片上制备了压电PZT薄膜 ,用XRD和AFM技术分析了不同热处理工艺条件下PZT薄膜的微观形貌变化及相结构演化 ,系统测试了PZT薄膜的铁电性能。工艺 -结构 -性能研究结果表明 :快速热处理工艺 (RTA )有利于PZT薄膜保持较低的漏电流密度 ,热处理温度是影响晶粒大小的主要因素 ,而保温时间则对PZT薄膜的致密性、晶粒均匀度和晶界结合状态以及PZT薄膜的铁电性能有明显影响。在优化热处理条件下 ,PZT薄膜的剩余极化值 (Pr)可达 2 7μC/cm2 ,漏电流密度为 1 0 -7A/cm2 。
Piezoelectric PZT thin films were prepared on Pt / Ti / TiO2 / SiO2 / Si (100) substrates by the improved sol-gel technique. The microstructure of the PZT thin films was analyzed by XRD and AFM Appearance change and phase structure evolution, the ferroelectric properties of PZT films were systematically tested. The results of the process-structure-property study show that the rapid thermal process (RTA) is conducive to the PZT thin film to maintain a low leakage current density, heat treatment temperature is the main factor affecting the grain size, and holding time on the PZT film densification, crystal Grain uniformity and grain boundary bonding state and PZT thin film ferroelectric properties have a significant impact. Under optimized conditions of heat treatment, the residual polarization (Pr) of PZT thin film can reach 27μC / cm2 and the leakage current density is 10-7A / cm2.