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本文通过磁控溅射Al掺杂的ZnO陶瓷靶,在n-Si片上沉积n型电导的ZnO薄膜而制备的ZnO/n-Si异质结,并通过测试其光照下的I-V、C-V特性对其光电特性以及载流子输运特性与导电机理进行了研究。研究表明ZnO/n-Si异质结存在良好的整流特性与光电响应,可以广泛应用在光电探测和太阳能电池等领域。由于在ZnO/n-Si异质结界面处的导带补偿与价带补偿相差太大的缘故,在正向电压超过0.8 V时,导电机理为空间电荷限制电流导电。同时研究表明ZnO/n-Si异质结界面存在大量界面态,可以通过减小界面态可以进一步提高其光电特性。
In this paper, ZnO / n-Si heterojunction prepared by magnetron sputtering Al-doped ZnO ceramic target was deposited on n-Si wafer by n-type conductivity ZnO thin film. Its optoelectronic properties as well as carrier transport characteristics and conduction mechanism were studied. Studies have shown that ZnO / n-Si heterojunction has good rectifying characteristics and photoelectric response, which can be widely used in the fields of photoelectric detection and solar cell. Due to the difference between the conduction band compensation and the valence band compensation at the ZnO / n-Si heterojunction interface, the conduction mechanism is space charge-limited current conduction when the forward voltage exceeds 0.8V. At the same time, it has been found that ZnO / n-Si heterojunction interface has a large number of interface states, which can be further enhanced by reducing the interface state.