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日本理化研究所研究人员在美国《物理评论通讯》杂志网络版上发表论文说,他们发现一种人工合成的镉锇氧化物在特定温度下由导体变为非磁性半导体的原因。这种特性使其能够成为不怕消磁的存储新材料。根据理化研究所日前发表的新闻公报,多数物质
Researchers at Japan’s Physical and Chemical Research Institute published a paper in the online edition of the Journal of Physical Review and Communication in the U.S. They said they found a reason why a synthetic cadmium osmium oxide changes from a conductor to a non-magnetic semiconductor at a specific temperature. This feature allows it to become a new material that is not afraid of degaussing storage. According to the press release recently published by the Physical and Chemical Institute, most substances