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在有效质量近似下采用变分法计算了InGaAsP/InP量子阱内不同In组分下的激子结合能,分析了结合能随阱宽和In组分的变化情况,并且讨论了外加电场对激子结合能的影响.结果表明:激子结合能是阱宽的一个非单调函数,随阱宽的变化呈现先增加后减小的趋势;随着In组分增大,激子结合能达到最大值的阱宽相应变小,这与材料的带隙改变有关;在一定范围内电场的存在对激子结合能的影响很小,但电场强度较大时会破坏激子效应.
Exciton binding energies of different In components in InGaAsP / InP quantum wells were calculated by the variational method under the effective mass approximation. The binding energies were analyzed with well width and In composition. The effects of applied electric field on the excitations The results show that the exciton binding energy is a non-monotonic function of well width, which increases first and then decreases with the variation of well width. With the increase of In content, the exciton binding energy reaches the maximum The value of the well width is correspondingly smaller, which is related to the change of the bandgap of the material. The influence of the electric field on the exciton binding energy is small in a certain range, but the exciton effect is destroyed when the electric field intensity is larger.