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南京电子器件研究所应用0.5μm的GaAs离子注入工艺,研制开发了2～6GHz的宽带单片功率放大器,其中的大电容采用高介电常数的电介质制造。放大器的主要性能如下: 工作频率/GHz 2～6.7 电压驻波比 1.7增益/dB17±1功率附加效率/%24输出功率/dB31芯片面积/
Nanjing Institute of Electronic Devices using 0.5μm GaAs ion implantation process, developed a 2 ~ 6GHz wideband monolithic power amplifier, which uses a large capacitance dielectric high dielectric constant. The main performance of the amplifier is as follows: Operating frequency / GHz 2 ~ 6.7 VSWR 1.7 Gain / dB17 ± 1 Power added efficiency /% 24 Output power / dB31 Chip area /