A non-equiphase Gaussian model is proposed to simulate the far-field distributions ofdouble-heterostructure diode lasers, which is physically reasonable because the phase along the junction of diode lasers could not be equal. A comparison of the numerically calculated intensity profiles in using the equal phase and non-equiphase models with the experimentally measured intensity profiles given by Nemoto shows that in the x direction perpendicular to the junction plane, the non-equiphase Gaussian model is as good as the equal phase Gaussian model. Specifically,in the y direction parallel to the junction plane and the 45° direction with respect to the x axis in the xoy plane,the numerical results by using the non-equiphase model are in good agreement with the experimental data, as the propagation distance is larger than a certain value.