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使用分子动力学方法对室温下单晶铜沿[001]和[111]方向冲击加载及卸载下的塑性行为进行了模拟,得到了Hugoniot关系以及冲击熔化压力,与实验基本符合.加载过程中,较高的初始温度有利于位错的形核与发展.通过对冲击波在自由表面卸载过程的模拟和分析发现:卸载过程呈现“准弹性卸载行为”;沿[001]方向卸载后大量不全位错环与堆积层错消失,而沿[111]方向卸载后只有少量层错消失,部分层错甚至会发展扩大.
The plastic behavior of single crystal copper along [001] and [111] directions at room temperature under shock loading and unloading was simulated by molecular dynamics method, and the Hugoniot relationship and impact melting pressure were obtained, which are in good agreement with the experiment. During the loading process, The higher initial temperature is favorable for nucleation and development of dislocations.Based on the simulation and analysis of the unloading process of shock wave on the free surface, it is found that the unloading process shows “quasi-elastic unloading behavior” Dislocation loops and buildup faults disappear, but only a small number of faults disappear along the [111] direction, and some fault faults can even develop and expand.