论文部分内容阅读
场效应晶体管的限制噪声机构是导电沟道的热噪声。这噪声可以用一个与输出并联的电流发生器(i~2)/(1/2)来表示。(?)值已计算出,对于零漏电压,这噪声相应于漏导的热噪声,而对于其他的偏压条件,给定栅压的噪声只稍微与漏压有关。由于沟道的调制效应,除了零漏偏压和超过饱和外,(?)是稍微大于直流漏导的热噪声。器件的噪声电阻近似等于 g_(max)/g_m~2,这里的g_m 是晶体管的跨导,而 g_(max)是它的最大值。如果考虑了由于沟道串联电阻引起的反馈,此近似变得更加精确。
The field-effect transistor noise-limiting mechanism is the thermal noise of the conductive channel. This noise can be represented by a current generator (i ~ 2) / (1/2) connected in parallel with the output. (?) The value has been calculated. For zero leakage voltage, this noise corresponds to leakage-conducted thermal noise. For other bias conditions, the noise of a given gate voltage is only slightly related to the drain voltage. Due to the modulation effect of the channel, (?) Is slightly larger than the thermal leakage of DC leakage, except for the zero-leakage bias and excess saturation. The noise resistance of the device is approximately equal to g_max / g_m ~ 2, where g_m is the transconductance of the transistor and g_max is its maximum value. This approximation becomes more accurate if the feedback due to the series resistance of the channel is taken into account.