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本文以ZnCl_2,CrCl_3·6H_2O和氨水缓冲溶液为原料,在4T脉冲磁场下水热法制备了Cr掺杂ZnO稀磁半导体晶体,通过X射线衍射分析、扫描电子显微镜观察及采用振动样品磁强计进行磁性分析等,探讨了脉冲磁场对其微观结构及磁性能的影响.结果表明:Cr掺杂ZnO稀磁半导体晶体仍保持ZnO的六方纤锌矿结构,脉冲磁场具有促进晶粒生长及取向排列的作用,4T脉冲磁场条件下合成的Cr掺杂ZnO稀磁半导体具有良好的室温铁磁性,其饱和磁化强度(M_s)为0.068 emu/g,而无脉冲磁场情况下制备的样品室温下呈顺磁性,并且,脉冲磁场下制备将稀磁半导体的居里温度提高了16 K.
In this paper, Cr-doped ZnO diluted magnetic semiconductor crystals were prepared by hydrothermal method using ZnCl_2, CrCl_3 · 6H_2O and aqueous ammonia buffer solution as raw materials. X-ray diffraction, scanning electron microscopy and vibrational sample magnetometer Magnetic analysis and so on, the influence of pulsed magnetic field on the microstructure and magnetic properties was discussed. The results show that the hexagonal wurtzite structure of ZnO is retained by the Cr doped ZnO diluted magnetic semiconductor crystal. The pulsed magnetic field has the effect of promoting grain growth and orientation , The Cr doped ZnO diluted magnetic semiconductor synthesized under 4T pulsed magnetic field has good room-temperature ferromagnetism and its saturation magnetization (M_s) is 0.068 emu / g, while the sample prepared without pulsed magnetic field is paramagnetic at room temperature , And pulsed magnetic field prepared by dilute magnetic semiconductor Curie temperature increased by 16K.