一、引言在双极型集成电路生产中,为了提高电路速度,采用了薄层外延,对通隔离和浅结扩散工艺。对通隔离的下隔离是作在外延之前的,因此在外延生长过程中有硼的自掺杂问题。在生产实践中发现,如果对硼的自掺杂不加以控制,将产生两种不良后果:外延层电阻率难以控制;自掺杂严重时电路低电平上升,电路速度下降,甚至不合格。本文探讨造成这些不良 I. Introduction In the production of bipolar integrated circuits, in order to improve the circuit speed, the use of thin-layer epitaxy, pass isolation and shallow junction diffusion process. The lower isolation of the pass is made before epitaxy, so there is a problem of boron self-doping during epitaxial growth. Found in production practice, if the self-doping of boron is not controlled, there will be two adverse consequences: the resistivity of the epitaxial layer is difficult to control; self-doping low rise in the circuit, the circuit speed decline, or even unqualified. This article explores the causes of these failures