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制备了结构为ITO/CuPc/NPB/Alq3/LiF/Al的有机发光二极管,并在100,70,40和15K四个温度测量了器件在恒流偏置下电致发光随磁场的变化.器件的电致发光包括瞬时荧光与延迟荧光两部分.两者都可以受外加磁场影响,但对磁场的依赖关系不同.由此导出了在不同磁场强度时瞬时光强度与延迟光强度和总发光强度的关系.基于对延迟光强度磁场效应的合理估计,分别计算了器件在不同的温度、电流下瞬时光强度与延迟光强度的值,和延迟光在器件总发光中的比重.计算结果显示,在15K和160μA时,延迟光在器件总发光中的比重可超过20%.对计算公式所基于的假设进行了分析,并且探讨了这些假设对计算结果的影响.
The organic light-emitting diodes with the structure of ITO / CuPc / NPB / Alq3 / LiF / Al were prepared and the electroluminescence changes with the magnetic field under constant current bias were measured at four temperatures of 100, 70, 40 and 15 K. The device Including both transient fluorescence and delayed fluorescence, both of which can be affected by the applied magnetic field but have different dependence on the magnetic field.Therefore, the relationship between the instantaneous light intensity and the delayed light intensity and the total luminous intensity at different magnetic field intensities Based on the reasonable estimation of the magnetic field effect of the delayed light intensity, the values of the instantaneous light intensity and the delayed light intensity of the device at different temperatures and currents, and the proportion of the delayed light in the total light emission of the device are calculated respectively. At 15K and 160μA, the delay light can account for more than 20% of the total luminous intensity of the device. The assumptions on which the formulas are based are analyzed and the impact of these assumptions on the results is explored.