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短沟道效应是小尺寸ＭＯＳＦＥＴ中很重要的物理效应之一，凹槽栅ＭＯＳＦＥＴ对短沟道效应有很强的抑制能力。通过对凹槽栅ＭＯＳＦＥＴ结构、特性的研究，发现凹槽拐角对凹槽栅ＭＯＳＦＥＴ的阈值电压及特性有着显著的影响。凹槽拐角处的阈值电压决定着整个凹槽栅ＭＯＳＦＥＴ的阈值电压。凹槽拐角的曲率半径是凹槽ＭＯＳＦＥＴ一个重要的结构参数。通过对凹槽拐角的曲率半径、源漏结深及沟道掺杂浓度进行优化设计，可使凹槽栅ＭＯＳＦＥＴ不仅能完成抑制短沟道效应，而且具有相当好的输出特性和Ｓ因子，使这种结构适合于深亚微米ＭＯＳＦＥＴ器件。
The short-channel effect is one of the most important physical effects in a small-size MOSFET, and the trench gate MOSFET strongly suppresses the short-channel effect. Through the research on the structure and characteristics of the trench gate MOSFET, it is found that the notch corner has a significant effect on the threshold voltage and the characteristics of the trench gate MOSFET. The threshold voltage at the corner of the recess determines the threshold voltage of the entire recess gate MOSFET. The radius of curvature at the corner of the groove is an important structural parameter for the trench MOSFET. By optimizing the radius of curvature, the source-drain junction depth and the doping concentration at the corner of the recess, the trench gate MOSFET can not only suppress the short-channel effect but also have good output characteristics and S-factor This structure is suitable for deep sub-micron MOSFET devices.