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利用聚焦的Ａｒ＋激光束诱导的方法，实现了对浸入ＨＦ∶Ｈ２Ｏ（１∶２０）腐蚀液中的Ｎ型单晶Ｓｉ样品的腐蚀，证明这种湿刻过程是一种由光生电子空穴对引起的电化学腐蚀，腐蚀坑具有侧壁平滑的高斯状结构。腐蚀特性与入射激光功率以及Ｓｉ掺杂浓度有关。应用激光诱导无电极电化学腐蚀电路模型对实验结果进行了合理的解释。
The etching of the N-type single crystal Si sample immersed in the HF: H2O (1:20) etching solution was achieved by the focused Ar + laser beam induction method. The wet etching process was proved to be a photo-induced electron-hole For electrochemical corrosion, the etch pit has a smooth Gaussian structure on the sidewalls. Corrosion characteristics depend on incident laser power and Si doping concentration. The experimental results are explained reasonably by using laser induced electrodeless electrochemical corrosion circuit model.