A full structure 290-nm ultraviolet light-emitting diode (UV-LED) with a nanoporous n-AlGaN underlayer was fabricated by top via hole formation followed by high-voltage electrochemical etching. The 20 to 120 nm nanopores were prepared in regular doped n-A
The spin Hall effect of light (SHEL) can be observed by the dark strip resulting from weak measurement. We find that the SHEL of a partially coherent beam (PCB) has a similar phenomenon as well. However, the dark strip in the SHEL of a PCB cannot be expla
We propose a novel ultra-wideband (UWB) triplet signal source based on the cross-gain modulation (XGM) in semiconductor optical amplifier (SOA). In the proposed scheme, only an optical source and two SOAs are needed, so the all-optical structure is compac
We demonstrate a high power continuous-wave (CW) and acoustic-optically (AO) Q-switched 1314-nm laser with a diode-side-pumped Nd:YLF module. A maximum CW output power of 21.6 W is obtained with a diode pump power of 180 W, corresponding to an optical-to-
Using e-beam evaporation, the ellipsometric parameters of thick transparent films are studied with the modified analysis method for the SiO2 film samples deposited onto the Si substrate. The ellipsometric parameters are measured at the incidence angles ch