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用等离子体增强化学气相淀积（ Ｐ Ｅ Ｃ Ｖ Ｄ）制备了氢化非晶硅薄膜（ａ Ｓｉ∶ Ｈ）并进行了退火实验， 利用红外吸收光谱（ Ｉ Ｒ）和金相显微镜研究薄膜中的氢含量及退火前后的脱氢现象， 得出材料组成及热稳定性对衬底温度 Ｔｓ 和射频功率 Ｐｒｆ 的依赖关系。
Hydrogenated amorphous silicon thin films (aSi:H) were prepared by plasma-enhanced chemical vapor deposition (P E C V D) and annealed. The properties of the films were characterized by IR (IR) and optical microscope Hydrogen content and dehydrogenation before and after annealing phenomenon, obtained material composition and thermal stability of the substrate temperature Ts and RF power Prf dependence.