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本文为了研究铑的分散度对蒸汽转化及芳构化的影响,在常压550℃下进行了甲烷、正戊烷、正庚烷在铑/氧化铝和铑/氧化硅催化剂上蒸汽转化的试验。发现在单位表面铑上用反应初速度表示的比催化活性取决于铑的分散度。在气化活性与处在晶面上的表面原子间以及芳构化活性与处在低配位(比如边或角上的原子)的表面原子间得到了良好的关系。利用脉冲技术,进一步证实了铑晶体上气化和芳构化活性点间的差别。
In this paper, in order to study the influence of rhodium dispersion on steam reforming and aromatization, experiments were conducted at atmospheric pressure at 550 ℃ for steam reforming of methane, n-pentane and n-heptane on rhodium / alumina and rhodium / silica catalysts . It was found that the specific catalytic activity, expressed as the initial velocity of reaction on the surface of rhodium, is dependent on the rhodium dispersion. There is a good relationship between the gasification activity and the surface atoms lying on the crystal plane and between the aromatization activity and the surface atoms lying at a low coordination (such as edge or corner atoms). The pulsed technique further confirms the difference between the gasification and aromatization activity points on rhodium crystals.