用X射线衍射貌相术研究了硅单晶中孪生界面区域的结构和缺陷.观察表明,除存在由完整的同一原子平面组成的孪生界面外,我们还发现存在位错和/或层错的不完整的孪生界面,经测定其中的位错是 b=1/6<112>的 Shockley 不全位错,而层错矢量垂直于孪生面,R=±1/3<111>.除描述台阶状孪生界面结构外,我们还提出一种孪生-层错模型,并借以解释所观察到的一些实验现象. X-ray diffraction morphometry was used to investigate the structure and defects of the twin interface region in the silicon single crystal. The observation shows that in addition to the presence of a twin interface consisting of a complete, identical atomic plane, we also find that the presence of dislocations and / or stacking faults The complete twin interface was found to have Shockley imperfect dislocations with b = 1/6 <112> and the stacking fault vector perpendicular to the twin plane, R = ± 1/3 <111> In addition to the interfacial structure, we also present a twin-layer fault model and explain some of the experimental phenomena observed.