【摘 要】
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The parasitic source resistance (Rs) of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) is studied in the temperature range 300-500 K.By using th
【机 构】
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School of Microelectronics, Shandong University, Jinan 250100, China“,”National Key Laboratory of Ap
论文部分内容阅读
The parasitic source resistance (Rs) of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) is studied in the temperature range 300-500 K.By using the measured Rs and both capacitance-voltage (C-V) and current-voltage (I-V) characteristics for the fabricated device at 300,350,400,450,and 500 K,it is found that the polarization Coulomb field (PCF) scattering exhibits a significant impact on Rs at the above-mentioned different temperatures.Furthermore,in the AlGaN/AlN/GaN HFETs,the interaction between the additional positive polarization charges undeeath the gate contact and the additional negative polarization charges near the source Ohmic contact,which is related to the PCF scattering,is verified during the variable-temperature study of RS.
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