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一、引言在微细加工艺中,离子束刻蚀具有独特的优点。无沾污,无钻蚀,具有极高的刻蚀分辨率,刻蚀0.2微米的线条已付诸生产应用。最突出的优点乃是其刻蚀图形的台阶倾角可以控制,这是反应溅射刻蚀、等离子体刻蚀所无法做到的。因而离子束刻蚀在磁泡、大规模、超大规模集成电路、集成光学、声表面波器件及激光等有着广泛的应用。在特殊加工如表面抛光、光栅加工、电子显微镜试样的离子减薄以及生物和金相结构显示等技术上,离子刻蚀更显示出独特的优点。因而离子束刻蚀技术越来越受到人们的重视。
I. Introduction In the micro-processing technology, ion beam etching has unique advantages. No staining, no drilling erosion, with a very high etching resolution, 0.2 micron etching lines have been put into production applications. The most prominent advantage is that the etching pattern of the step angle can be controlled, which is reactive sputter etching, plasma etching can not do. Ion beam etching is therefore widely used in bubble, large scale, VLSI, integrated optics, surface acoustic wave devices and lasers. Ion etching also shows unique advantages in special processing such as surface polishing, grating processing, ion thinning of electron microscope specimens, and display of biological and metallurgical structures. Therefore, ion beam etching technology is more and more people’s attention.