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围绕NEA GaN光电阴极光电发射过程的光谱响应理论,研究了其量子产额问题。分别给出了反射模式和透射模式NEA GaN光电阴极的量子产额计算公式,分析了影响量子产额的因素。分析了国外制备的反射模式和透射模式NEA GaN光电阴极的量子产额曲线。结果表明,目前制备的NEA GaN光电阴极已具有高达30%的量子效率和良好的发射性能。相同条件下,反射模式比透射模式的量子效率要高,而且反射模式不像透射模式那样存在短波限制。
Based on the spectral response theory of NEA GaN photocathode, the quantum yield problem was studied. The quantum yield formula of NEA GaN photocathode in both reflective and transmissive modes is given respectively, and the factors affecting the quantum yield are analyzed. The quantum yield curves of NEA GaN photocathodes fabricated in foreign countries were analyzed. The results show that the presently prepared NEA GaN photocathode has up to 30% quantum efficiency and good emission performance. Under the same conditions, the reflection mode is higher than the quantum efficiency of the transmission mode, and the reflection mode does not have the short wave limit as the transmission mode.