【摘 要】
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To improve absorption of quantum well infrared photodetectors (QWIPs),a coupling layer with metallic grating is designed and fabricated above the quantum well.T
【机 构】
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School of Physical Electronics,University of Electronic Science and Technology of China,Chengdu 6100
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To improve absorption of quantum well infrared photodetectors (QWIPs),a coupling layer with metallic grating is designed and fabricated above the quantum well.The metal grating is composed of 100 nm Au film on top,and a 20-nm Ti thin layer between the Au film and the sapphire substrate is coated as an adhesion/buffer layer.To protect the photodetector from oxidation and to decrease leakage,a SiO2 film is deposited by neans of plasmaenhanced chemical vapor deposition.A value of about 800nm is an optimized thickness for the SiO2 applied in the metallic grating-based mid-infrared QWIP.In addition,a QWIP passivation layer is studied experimentally.The results demonstrate that the contribution from the layer is positive for metal grating coupling with the quantum well.The closer the permittivity of the two dielectric layers (SiO2 and the passivation layers),and the closer the two transmission peaks,the greater the QWIP enhancement will be.
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