论文部分内容阅读
提出一种氧的等离子氧化的方法改善结区边缘绝缘性能,降低超导隧道结的漏电流。对Al膜进行等离子氧化能够有效的改善氧化膜的绝缘性能,AES分析表明:氧化绝缘层均匀,界面清晰;应用此方法成功制备出较好性能的Nb隧道结。
A method of oxygen plasma oxidation is proposed to improve the edge insulation of junction region and reduce the leakage current of superconducting tunnel junction. Plasma oxidation of Al film can effectively improve the insulation properties of the oxide film. AES analysis shows that the oxide insulating layer is uniform and the interface is clear. The Nb tunnel junction with good performance is successfully prepared by this method.