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利用等离子体辅助分子束外延的方法在ZnO单晶衬底上制备了ZnO薄膜。利用X射线衍射(XRD)、同步辐射掠入射XRD和φ扫描等实验技术研究了ZnO薄膜的结构。XRD和φ扫描的结果显示同质外延的ZnO薄膜已经达到单晶水平。掠入射XRD结果表明ZnO薄膜内部不同深度处a方向的晶格弛豫是不一致的,从接近衬底界面处到薄膜的中间部分再到薄膜的表面处,a方向的晶格常数分别为0.3249,0.3258和0.3242 nm。计算得到ZnO薄膜的泊松比为0.156,同质外延的ZnO薄膜与衬底在a轴方向的晶格失配度为-0.123%。
ZnO thin films were prepared on ZnO single crystal substrate by plasma assisted molecular beam epitaxy. The structure of ZnO thin films was investigated by X-ray diffraction (XRD), synchrotron radiation grazing incidence X-ray diffraction (XRD) and φ-scan. The results of XRD and φ scanning show that the homoepitaxial ZnO thin film has reached the single crystal level. The grazing incidence X-ray diffraction (XRD) results show that the lattice relaxation in a direction at different depths is inconsistent. The lattice constants in a direction from the interface near the substrate to the middle of the film to the surface of the film are 0.3249, 0.3258 and 0.3242 nm. The calculated Poisson’s ratio of ZnO thin film is 0.156. The lattice mismatch degree between the homoepitaxial ZnO thin film and the substrate in the a-axis direction is -0.123%.