论文部分内容阅读
通过在常规横向PNP晶体管基区表面氧化层上淀积栅电极,制作了可以利用栅极偏置调制基区表面势的栅控横向PNP晶体管。对无栅极偏置电压和偏置电压分别为-10V和10V的栅控横向PNP晶体管,在西安脉冲反应堆上开展注量为2×1012,4×1012,6×1012,8×1012,1×1013 cm-2的中子辐照实验,研究基区表面势的增加和降低对栅控横向PNP晶体管中子位移损伤退化特性的影响。研究结果表明,基区表面势的增加引起栅控横向PNP晶体管共射极电流增益倒数的变化量随辐照中子注量的退化速率增加,基区表面势的降低对位移损伤退化速率无明显影响。
By depositing a gate electrode on the oxide of the conventional lateral PNP transistor base region, a gate-controlled lateral PNP transistor that can utilize the gate bias to modulate the surface potential of the base region was fabricated. For a gate-controlled lateral PNP transistor with no gate bias voltage and bias voltage of -10V and 10V, respectively, a fluence of 2 × 1012, 4 × 1012, 6 × 1012, 8 × 1012, × 1013 cm-2 neutron irradiation experiments to study the influence of the increase and decrease of surface potential on the degeneration characteristics of the gate-controlled lateral PNP transistor neutron displacement damage. The results show that the increase of surface potential in the base region causes the variation of the inverse of the common-emitter current gain of the gate-controlled lateral PNP transistor to increase with the degradation rate of the irradiated neutron flux. The decrease of the surface potential has no obvious effect on the degradation rate of the displacement damage influences.