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为了制备高温超导带材,采用直流反应磁控溅射在Ni-5%(摩尔分数)W衬底上制备双轴织构的CeO2薄膜用作缓冲层。通过反射高能电子衍射仪观察分析了双轴织构CeO2的衍射谱。选取某一衍射点,提取其衍射强度相对直入点的弧度分布,拟合半高宽得到其面外取向分布;旋转样品,对某一非对称晶面的衍射强度做摇摆分析,得到其面内取向分布,其结果均与X射线衍射分析结果较为吻合。在CeO2缓冲层上制备的YBa2Cu3O7薄膜的临界温度为88 K,临界电流密度为1.2 MA/cm2(77 K)。
For the preparation of high temperature superconducting tapes, a biaxially textured CeO2 film was prepared as a buffer layer on a Ni-5% (w / w) W substrate by DC reactive magnetron sputtering. The diffraction spectrum of biaxially textured CeO2 was observed and analyzed by reflection high-energy electron diffraction. A diffraction point is selected to extract the radian distribution of the diffraction intensity relative to the straight-in point, and the half-height width is obtained to obtain the out-of-plane orientation distribution. The rotating sample is used to analyze the diffraction intensity of an asymmetric crystal plane to obtain the in-plane Orientation distribution, the results are in good agreement with the X-ray diffraction analysis. The critical temperature of YBa2Cu3O7 thin film prepared on CeO2 buffer layer is 88 K and the critical current density is 1.2 MA / cm2 (77 K).