论文部分内容阅读
半导体纳米材料超大的弹性极限使其物理性能具有很宽的调谐范围,被认为是应变工程理想的研究材料,引起了人们广泛的关注.本研究中,利用聚焦离子束技术从p型Si的单晶薄膜上切割出?100?取向的单根纳米线,在透射电子显微镜中利用纳米操控系统对其加载弯曲形变,同时实时监测其电流-电压曲线的变化,研究弯曲应变对其电学性能的影响.结果表明,随着应变的增大,纳米线输运性能明显增强,当应变接近2%时,输运性能随应变的提升接近饱和;当应变达到3%以后,输运性能有时会略微下降,这可能由塑形事件导致的.本实验结果可能会对Si应变工程起到重要的参考意义.
The large elastic limit of semiconductor nanomaterials makes its physical properties have a wide tuning range and is considered as the ideal research material of strain engineering, arousing widespread concern.In this study, the use of focused ion beam technology from the p-Si single A single nanowire with a? 100? Orientation was cut out on a thin film of crystalline silicon and loaded on a transmission electron microscope using a nanomanipulation system. The current-voltage curve was monitored in real time to investigate the effect of bending strain on the electrical properties The results show that with the increase of strain, the transportability of nanowires is obviously enhanced. When the strain is close to 2%, the transport performance becomes close to saturation with the increase of strain. When the strain reaches 3%, the transportability sometimes decreases slightly , Which may be caused by shaping events.The results of this experiment may play an important reference meaning for Si strain engineering.