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采用两步生长法用金属有机物气相外延技术在GaAs(100)衬底生长InP,用原子力显微镜探索了退火和未退火的低温缓冲层以及InP外延层的表面形貌,测量了他们的表面均方根值,讨论了低温缓冲层表面形貌随生长温度的变化以及退火对其表面形貌的影响,并分析外延层与低温缓冲层表面形貌的依赖关系,外延层表面形貌均方根值与XRD测量值一致,在450℃生长低温缓冲层,外延层有最好的表面形貌。
The InP was grown on GaAs (100) substrate by metal-organic vapor phase epitaxy using a two-step growth method. The surface morphology of the annealed and unannealed low temperature buffer layer and InP epitaxial layer was explored by atomic force microscopy. The effect of annealing on the surface topography of the low temperature buffer layer was discussed. The dependence of the surface morphology of the epitaxial layer on the low temperature buffer layer was analyzed. The root mean square of surface morphology of the epitaxial layer In agreement with the XRD measurements, a low temperature buffer layer was grown at 450 ° C and the epitaxial layer had the best surface topography.