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根据太赫兹平面肖特基二极管物理结构,在理想二极管SPICE参数模型的基础上建立了二极管小信号等效电路模型。依据该二极管等效电路模型设计了基于共面波导(CPW)去嵌方法的二极管S参数在片测试结构,并对其在0.1~50 GHz、75~110 GHz频率范围内进行了高频小信号测试,利用测试结果提取了高频下二极管电路模型中各部分电容、电阻以及电感参数。将相应的高频下电容与电阻参数分别与低频经验公式电容值和直流I-V测试提取的电阻值进行了对比,并利用仿真手段对高频参数模型进行了验证。完整的参数模型以及测试手段相较于理想二极管SPICE模型和传统的参数提取方法可以更为准确地表征器件在高频下的工作状态。该建模思路可用于太赫兹频段非线性电路的优化设计。
According to the terahertz plane Schottky diode physical structure, a diode small signal equivalent circuit model is established on the basis of ideal diode SPICE parameter model. According to the diode equivalent circuit model, a diode S-parameter in-chip test structure based on the CPW deembedding method is designed, and a high-frequency small signal is performed in the frequency range of 0.1-50 GHz and 75-110 GHz Test, the use of test results extracted from the diode circuit model of high-frequency capacitance, resistance and inductance parameters. The corresponding capacitance and resistance parameters at high frequency are respectively compared with the capacitance of low-frequency empirical formula and the resistance value extracted by DC I-V test. The high-frequency parametric model is verified by simulation. Compared with ideal diode SPICE model and traditional parameter extraction method, the complete parametric model and testing method can more accurately characterize the working condition of the device under high frequency. This modeling idea can be used to optimize the design of the nonlinear circuit in the terahertz band.