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在Ar和H2的混合气氛下采用直流磁控溅射在玻璃衬底上低温沉积Al掺杂ZnO,即ZnO∶Al透明导电薄膜,研究H2流量(0～10sccm)对薄膜结构、形貌、光学和电学性能的影响。结果表明:不同H2流量下制备的ZnO∶Al薄膜均为高度C轴取向的六角纤锌矿结构,溅射过程中通入适量的H2能改善ZnO∶Al薄膜的结晶质量和表面形貌;所有薄膜在400～900nm范围内的平均透过率均高于85%;随着H2流量的增大,薄膜的载流子浓度升高,电阻率减小,达到10-4Ω.cm数量级。
Al doped ZnO, ie, ZnO: Al transparent conductive thin film was deposited on the glass substrate by direct current magnetron sputtering under a mixed atmosphere of Ar and H2. The effect of H2 flow rate (0 ~ 10sccm) on the structure, morphology, And electrical properties. The results show that the ZnO:Al films prepared under different H2 flow rates are hexagonal wurtzite structures with high C-axis orientation. The appropriate amount of H2 can improve the crystal quality and surface morphology of ZnO:Al thin films during sputtering. All The average transmittance of the film in the range of 400-900 nm was higher than 85%. With the increase of H2 flow rate, the carrier concentration of the film increased and the resistivity decreased to the order of 10-4? Cm.