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日本索尼中央研究所,最近采用在已进行离子注入的 GaAs 衬底上不用复盖保护膜的退火方法制成了结型 FET 环形振荡器,尽管栅长为2μm 是比较长的,仍然得到了最小门延迟时间为58ps、相应功耗为1mW/门的结果。将 GaAs 在800～850℃的高温下退火时,砷容易析出,为此一般采用 Si_3N_4和 SiO_2等来保护表面,但这样做,注入层的结特性容易发生变化。如果在 H_2中通2%的 AsH_3提高 As 分
Japan's Sony Central Research Institute recently fabricated a junction FET ring oscillator without annealing the GaAs substrate that has undergone ion implantation and covered with a protective film. Even though the gate length of 2 μm is relatively long, the smallest gate is obtained The delay time is 58ps, the corresponding power consumption is 1mW / gate result. When GaAs is annealed at a high temperature of 800 to 850 ° C, arsenic tends to be precipitated. For this purpose, surfaces such as Si_3N_4 and SiO_2 are generally used to protect the surface, but in this case, the junction characteristics of the implanted layer tend to change. If H_2 through 2% AsH_3 increase As points